Imec fabs p-GaN power devices on thermally matched substrates

Imec and substrate materials specialist Qromis have developed enhancement mode p-GaN power devices on 200mm engineered Coefficient of Thermal Expansion (CTE)-matched substrates, processed on Imec's silicon pilot line. The substrates are offered by Qromis as commercial 200mm QST substrates as part of their patented product portfolio. Today, GaN-on-Si technology is the industry standard platform for commercial GaN power switching devices for wafer diameters up to 150mm/6 inch.

Source: Electronics Weekly LINK