Sunday, July 16, 2017

Oxford Instruments using NPL's non-destructive quality control method to commercialize wafer-scale fabrication of 2D molybdenum disulphide

UK-based Oxford Instruments says that a world-first non-destructive quality control method developed by the UK's National Physical Laboratory (NPL) has enabled it to commercialize wafer-scale fabrication technology for the two-dimensional (2D) semiconducting material molybdenum disulphide (MoS2)...

Source: Semiconductor Today LINK

Veeco Announces Date for 2Q/2017 Financial Results and Conference Call

PLAINVIEW, NY--(Marketwired - July 13, 2017) - Veeco Instruments Inc. (NASDAQ: VECO) plans to release its second quarter 2017 financial results after the market close on Thursday, August 3, 2017. The company will host a conference call to review these results starting at 5:00pm ET that day.
Source: Marketwired LINK

Introducing the FlexAL-2D the ALD Plasma Processing System for 2D Materials

Oxford Instruments’ ALD and 2D technical specialists have teamed up with Eindhoven University of Technology research teams to develop the innovative FlexAL-2D for atomic layer deposition (ALD) of 2D transition metal dichalcogenides for nanodevice applications.

Source: AZoNano LINK

Versum Materials 3Q/2017 Earnings Conference on Tuesday August 1, 2017

( Versum Materials, Inc. (NYSE:VSM), a leading global materials supplier to the semiconductor industry, announced today that it plans to release its third quarter fiscal 2017 financial results on Tuesday August 1, 2017, pre-market open. Management will review the results during a conference call and audio-only...

Source: 4-traders LINK

Thursday, July 13, 2017

ASM International will report operating results for the 2017/2Q Tuesday, July 25, 2017

ASM International N.V. (Euronext Amsterdam: ASM) will report operating results for the 2017 second quarter ended June 30, 2017 at approximately:

18:00 p.m. Continental European Time - Tuesday, July 25, 2017.
12:00 a.m. (noon) US Eastern Time - Tuesday, July 25, 2017.

ASM International will host an investor conference call and webcast on Wednesday, July 26, 2017 at 15:00 Continental European Time (9:00 a.m. - US Eastern Time).

A simultaneous audio webcast and replay will be accessible at

ASM International NV (ASMIY) Investor Presentation - Slideshow

,| ASM International N.V. (ASMIY)
The following slide deck was published by ASM International N.V. in conjunction with a recent investor relations event (SeekingAlpha).

Direct link to pdf-verion at ASM web (LINK)

ASM introduce the Intrepid® ES(TM) 300mm epitaxy tool for logic and memory high-volume production applications

ASM International N.V. (Euronext Amsterdam: ASM) today introduced the Intrepid® ES(TM) 300mm epitaxy (epi) tool for advanced-node CMOS logic and memory high-volume production applications. Intrepid ES introduces innovative closed loop reactor control technology that enables optimal within wafer and wafer-to-wafer process performance, critical for today's advanced transistors and memories. Furthermore, Intrepid ES reduces the cost per wafer significantly for a 7nm epi process compared with prior node processes. The new tool has been qualified for production at a leading-edge foundry customer, and is targeting production applications in other industry segments as well. To date, over 40 reactors have been delivered. 
ASM Epi roadmap as presented at the latest ASMI Analyst and Investor Technology Seminar (

Tuesday, July 11, 2017

IC Deposition Materials Market Forecast of $1.2B by 2021

Precursors for metals and dielectrics in strong demand for finFETs and 3D-NAND

San Diego, CA, July 11, 2017: TECHCET CA—the advisory service firm providing electronic materials information—today announced that specialty chemical precursor market for the deposition of dielectrics and metals in integrated circuit (IC) fabrication is forecasted to increase at ~10% CAGR through the year 2021. TECHCET’s proprietary Wafer Forecast Model (WFM) shows that 3D-NAND devices are expected to grow at a rapid pace from 2016 and become one of the top three market segments by 2020. Logic ICs will continue to evolve, from 3D finFET devices to Gate-All-Around Nano-Wires (GAA-NW), enabled by new critical materials and manufacturing processes as detailed in new reports from TECHCET, “Advanced Insulating Dielectric Precursors,” and "ALD/CVD High-k & Metal Precursors." 

Precursors tracked by TECHCET for ALD/CVD of metal and high-k dielectric films on IC wafers include sources of aluminum, cobalt, hafnium, tantalum, titanium, tungsten, and zirconium. The total market for 2017 is now estimated to be US$435M, growing to US$638M in 2021. The top-2 suppliers are estimated to hold more than half of the total available market, with many players competing to supply the next enabling molecule. In particular, cobalt precursor demand is forecasted to reach >$80M in 2021 as foundries transition to below 14nm-node processing. As a potential conflict mineral, TECHCET tracks the sub-suppliers of cobalt.

“Metal precursors have had double-digit growth over an extended period of time, and we expect that to continue as the IC industry transitions to 10nm- and 7nm-node logic and 3D-NAND fabrication, with an average long term CAGR of 11% over 2013 to 2021,” says Dr. Jonas Sundqvist, lead author of the report, senior technology analyst with TECHCET and researcher with Fraunhofer IKTS. “Dielectric precursors growth today is clearly driven by dielectric PEALD deposition in multiple patterning, and by dielectric CVD in 3D-NAND.”

Precursors tracked by TECHCET for ALD/CVD/SOD of advanced dielectric films on IC wafers include multiple sources of silicon. The total market for 2017 is now estimated to be just over US$400M, growing to US$560M in 2021. Current growth over 10% is expected to slow slightly to be in the 8-10% range over 2019-2021. Anticipated near-term developments include transitions from CVD to ALD for several IC fab modules.

Global Suppliers of Critical Materials covered in this report include:

Air Liquide,
Dow Corning,
H.C. Starck,
Merck EMD,
Nanmat Technology,
Norquay Technology,
Nanogen Solutions,
TCI Chemicals,
Tri-Chemical Laboratories,
UP Chemical,
Versum Materials,
Wonik Materials.

Purchase Reports Here:

ABOUT TECHCET: TECHCET CA LLC is an advisory service firm focused on process materials supply-chains, electronic materials technology, and materials market analysis for the semiconductor, display, solar/PV, and LED industries. Since 2000, the company has been responsible for producing the SEMATECH Critical Material Reports, covering silicon wafers, semiconductor gases, wet chemicals, CMP consumables, Photoresists, and ALD/CVD Precursors. For additional information about these reports or CMC Fabs membership please contact Diane Scott or Michel Walden at +1-480-332-8336, or go to or +1-480-332-8336, or go to or

Monday, July 3, 2017

Apple A10X using TSMC 10nm FF has been analyzed by Techinsight

According to reverse engineering by Techinsight, the Apple A10X is confirmed to be built on TSMC’s 10 FF process. The die size is a full node shrink as copared to the previous A9X, which was fabed using the TSMC 16nm FF.

As reported by Techinsight, Samsung was however first on using 10nm for their Samsung Galaxy S8.

Source: Techinsight LINK

Sunday, July 2, 2017

China DRAM startup to enter 19nm chip production in February 2018

DIGITIMES reports that China DRAM startup to enter 19nm chip production in February 2018.

Hefei Rui-Li (transliterated from Chinese) Integrated Circuit will start making DRAM chips using 19nm process technology around the end of February 2018, according to industry sources.

Formerly named Hefei Chang Xin, Rui-Li IC will start installing equipment at its new 12-inch fab at the end of 2017 which is ahead of schedule, said the sources. Rui-Li has started negotiating with silicon wafer providers to ensure a sufficient supply.


Toshiba Memory Corporation Announces 96-Layer 3D Flash Memory

TOKYO-Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH™ three-dimensional (3D) flash memory with a stacked structure*1, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.
Source: Toshiba LINK